Influence of structure design parameters of chamber and buffer on thickness uniformity of iron oxide CVD thin film

DOI

https://www.doi.org/10.59256/ijrtmr.20250505020

Published In

Volume 5, Issue 5 (2025)

Published Online

September-October 2025

Pages

122-129

Article Type

Original Article

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The iron oxide CVD thin film exhibits the various beautiful colors with the brilliance, and the technology effectively could be applied for varied color of an artificial gem.The iron oxide CVD thin film is used for the manufacture of the iron oxide photo plate called as a semi transparent mask. This paper aimed to progress the structure design of the buffer to enhance the thickness uniformity of iron oxide CVD thin film by means of a new numerical simulation method (Computational Fluid Dynamics numerical simulation) within the chamber. A new numerical analysis was carried out using “ANSYSFLUENT” program. The simulations were developed for a circular cone chamber and a circular cone buffer. There exists a good relationship between the thickness uniformity of iron oxide Chemical Vapor Deposition (CVD) thin film and the structure design parameters of chamber and buffer. This work discussed that the thickness uniformity of iron oxide CVD thin film is affected by the structure design parameters of circular cone chamber and a circular cone buffer and the reasonable structure design parameters of chamber and buffer were suggested. The comparison between the numerical analysis results and the experimental data was performed and a good agreement was found. The maximum deviation between them is less than 8%.