editorinchief@ijrtmr.com +91 9840521421 Scholarly Open Access, Peer-reviewed, Refereed Journal e-ISSN 2583-0368 Since 2021
  1. Home
  2. Archives
  3. 2025
  4. Vol. 5 Issue 5
  5. Article
Original Article

Verification of lifetime prediction model and lifetime prediction function based on the mechanical parameters of NPT-IGBT module

  • Paper ID 221
  • Volume 5, Issue 5
  • Pages 108-115
  • Published Online: September-October 2025
  • 5 Views
Open Access Peer Reviewed Crossref DOI

Authors

  • Hak Bong Kim1
  • Il Hyok Kim2
  • Chol Myong Hyon3
  • Hyon Chol Kang4

1 Student member, IEEE, The Institute of Semiconductor, Kim Chaek University of Technology, Pyongyang, DPR Korea. 2 3 The Institute of Semiconductor, Kim Chaek University of Technology, Pyongyang, DPR Korea. 4 The Institute of Physics, Kim Il Sung University, Pyongyang, DPR Korea.

Article Information

Published Online
September-October 2025
Pages
108-115
Article Type
Original Article
Check for updates
check update

References

1. Wang B, Wang L, Mu W, Qin M, Yang F, Liu J, et al. Thermal performances and annual damages comparison of MMC using reverse conducting IGBT and conventional IGBT module. IEEE Transactions on Power Electronics, 36(9), (2021):9806–25.
2. Yang Y, Zhang P. In situ junction temperature monitoring and bond wire detecting method based on IGBT and FWD on-state voltage drops. IEEE Transactions Ind Appl, 58 (1), (2022): 576–87.
3. Ran Yao, Zeyu Duan, et al., Lifetime prediction for press pack IGBT device by considering fretting wear failure, Microelectronics Reliability, 145 (2023) :114984
4. Ling-Ling Li, Zhi-Feng Liu, et al., Prediction of IGBT power module remaining lifetime using the aging state approach, Microelectronics Reliability, 102, (2019) : 113476
5. Dengyu Xiao, Chengjin Qin, et al., Self-attention-based adaptive remaining useful lifetime prediction for IGBT with Monte Carlo dropout, Knowledge-Based Systems, 239 (2022): 107902
6. Yang L, Agyakwa P Y, Johnson C M, Physics-of- failure lifetime prediction models for wire bong interconnects in power electronic electronics modules [J], IEEE Transactions on Device and Materials Reliability, 13, (2013): 9-17.
7. Hanif A , Yu Y, Devoto D, Khan F, A comprehensive review toward the state-of-the art in failure and lifetime predictions of power electronics devices[J] , IEEE Transactions and Power Electronics, 34, (2018): 4729-4746
8. Hung T Y, Liao L L, et al., Lifetime prediction of high-cycle fatigue in aluminum bonding wires under power cycling test [J], IEEE Transactions on Device and Materials Reliability, 2014, 14(1): 484-492.
9. Musallam M, Jonson C M, et al., Real-time comparison of power module failure modes under in-service[C], Proceedings of 13th European Conference on Power Electronics and Applications, IEEE, (2009): 1-10.
10. Hutzler A, Tokarski A, Schlez A, Extending the lifetime of power electronic assemblies by increased cooling temperatures, Microelectrics Reliability, 53, (2013): 1774-1777.
11. Bahman A S, Ma K, Blaabjerg F, A lumped thermal model including thermal coupling and thermal boundary conditions for high-power IGBT modules[J], IEEE Transactions and Power Electronics, , 33, (2017): 2518-2530.
12. Zhihong W, Xiezu S, Yuan Z, IGBT junction and coolant temperature estimation by thermal model[J], Microelectrics Reliability, 87, (2018): 168-182.
13. Celnikier Y, Benabou L, et al., Investigation of the heel crack mechanism in Al connection for power electronics modules [J], Microelectrics Reliability, 51, (2011): 965-974..
14. Yang X, Lin Z, et al., Lifetime prediction of IGBT modules in suspension choppers of medium/low-speed maglev train using an energy-based approach. IEEE Transactions on Power Electronics, 34, (2018):738–747.
15. Wang B, Wang J, et al., A lifetime estimation method of MMC sub modules based on the combination of FEA and physical lifetime model[C], Proceeding of 10th International Conference on Power and Electronics and ECCE, Asia, IEEE, (2019): 1-6.
16. Ciappa M, Fichtner W, Lifetime prediction of IGBT modules for traction application, Proceeding of IEEE International Reliability Physics Symposium, IEEE, (2000): 210-216.
APC from ₹1200 + 18% GST

Peer-reviewed open access₹1200 Indian (₹1400 with DOI)$80 USD internationalpaid after acceptance Peer-reviewed open access₹1200 Indian$80 USD international ₹1200 Indian · $80 intl

  • CrossRef DOI
  • ISSN 2583-0368
  • Open Access
  • Peer Reviewed
  • Plagiarism Checked
  • Google Scholar
Submit Paper