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Original Article

Analysis for some characteristics of the Dual-Material Double-Gate MOSFET

  • Paper ID 222
  • Volume 5, Issue 5
  • Pages 116-121
  • Published Online: September-October 2025
  • 5 Views
Open Access Peer Reviewed Crossref DOI

Authors

  • Hui Chol Ri1
  • Chol Myong Hyon2
  • Il Hyok Kim3
  • Hak Bong Kim4

1 2 3 4 Student member, IEEE, Semiconductor Institute, Kim Chaek University of Technology, D.P.R. Korea.

Article Information

Published Online
September-October 2025
Pages
116-121
Article Type
Original Article
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References

1. Reddy, G. V., Kumar M. J. A New Dual-Material Double-Gate Nanoscale SOI MOSFET-Two-Dimensional Analytical Modeling and Simulation[J]//IEEE Transactions on Nanotechnology. 4 (2005), 260-268.
2. Sharma R. K., Gupta R., Gupta M., Gupta R. S. Dual-Material Double-Gate SOI n-MOSFET: Gate Misalignment Analysis[J]//IEEE Transactions on Electron Devices. 56, (2009), 1284-1291.
3. Kumar M. J., Orouji A. A., Dhakad H. New Dual-Material SG Nanoscale MOSFET: Analytical Threshold-Voltage Model[J]//IEEE Transactions on Electron Devices. 53(2006), 920-923.
4. Tsormpatzogloua A., Pappasa I., et al., Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs// Microelectronic Engineering. 90, 2012, 9–11
5. Ekta G., Sanjay K., Kunal S., et al., 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs//IEEE TRANSACTIONS ON ELECTRON DEVICES. 63 (2016), 966-973.
6. Buvaneswari B., Neerathilingam B. B. 2D Analytical Modeling and Simulation of Dual material DG MOSFET for Biosensing Application//International Journal of Electronics and Communications. 99 (2019). 193-200
7. Nistala, Bheema R, Suddapalli, Subba R. Variability analysis of a graded- channel dual-material double-gate strained-silicon MOSFET with fixed charges, Springer. 21 (2022), 210-219
8. Gupta, Abhinav, et al., Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs, Springer, 14 (2022)
9. Maity, N. P., Baishya, S., et al., An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET, Springer, 14 (2022)
10. Arun Samuel, T. S., Darwin, S., A Holistic Approach on Junctionless Dual Material Double Gate (DMDG) MOSFET with High k Gate Stack for Low Power Digital Applications, Springer, 12 (2020)
11. Saha, Rajesh, Linearity Parameters Evaluation due to Lateral Straggle in Ge-Source DMDG-TFET, Springer, 14, (2022)
12. Girdhardas, Kalola Ankit, et al. Surface Potential Modeling of Graded-Channel Gate-Stack (GCGS) High-K Dielectric Dual-Material Double-Gate (DMDG) MOSFET and Analog/RF Performance Study, Springer, 10 (2018)
13. Naskar, S.;Sarkar, S.K., Quantum Analytical Model for Inversion Charge and Threshold Voltage of Short-Channel Dual-Material Double-Gate SON MOSFET, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (2013)
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